Ferroelectric Transistors: A Platform for the Future of Memory
Register with organizerWhat to look forward to
Dr. Sijung Yoo, a Principal Researcher at Samsung Advanced Institute of Technology with a Ph.D. in Materials Science and Engineering, will present advances in oxide-channel ferroelectric transistors for fast, reliable capacitor-less DRAM and low-power ferroelectric NAND. The talk will explore how these devices could support AI’s growing demand for faster, denser, and more energy-efficient memory.
Inside the event
Abstract: The rapid growth of artificial intelligence demands faster, denser, and more energy-efficient memory across the memory hierarchy. Oxide-channel ferroelectric transistors offer a versatile platform for addressing these diverse requirements. In this talk, I will present our recent progress in fast, reliable capacitor-less DRAM and low-power ferroelectric NAND, highlighting their potential as a platform for the future of memory. Bio: Dr. Sijung Yoo is a Principal Researcher at Samsung Advanced Institute of Technology (SAIT), where he leads ferroelectric device project. He received his B.S., M.S., and Ph.D. in Materials Science and Engineering from Seoul National University. His research focuses on emerging memory and logic devices through innovative materials design.
Meet in Cambridge, MA
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Last checked: Oct 13, 2026. Confirm current availability before making plans.